PART |
Description |
Maker |
22N60 22N60G-T47-T 22N60L-T47-T 22N6011 |
22A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
IXTQ22N60P IXTV22N60PS |
MOSFET N-CH 600V 22A TO-3P 22 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode
|
IXYS, Corp. IXYS Corporation
|
FCA22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
HUF75939S3ST HUF75939P3 HUF75939P3NL |
22A, 200V, 0.125 Ohm, N-Channel, UltraFETPower MOSFET 22A 200V 0.125 Ohm N-Channel UltraFET Power MOSFET 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
HFA35HB60SCS |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
|
International Rectifier
|
RF1S22N10SM RFP22N10 |
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|
APT5024SVR |
POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT4018HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 400V 22A 0.180 Ohm
|
Advanced Power Technology Ltd.
|
FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
|
IXTQ22N50P IXTH22N50P IXTV22N50P IXTV22N50PS |
MOSFET N-CH 500V 22A TO-3P 22 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS, Corp. IXYS Corporation
|